Integrated receivers up to 220 GHz utilizing GaAs-mHEMT technology
作者： H. Zirath , N. Wadefalk , R. Kuzhuharov , S.E. Gunnarsson , S. Cherednichenko
DOI: 10.1109/RFIT.2009.5383658
关键词:
摘要: The status of integrated receivers for remote sensing and communication applications from 60 GHz to higher frequencies is reviewed. Recent receiver results silicon III–V technologies are compared with Schottky diode receivers.
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sci-hub.se 参考文章(19)
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