A 22 dBm, 0.6 mm² D-Band SiGe HBT Power Amplifier Using Series Power Combining Sub-Quarter-Wavelength Baluns
作者： Saeid Daneshgar , James F. Buckwalter
DOI: 10.1109/CSICS.2015.7314467
关键词:
摘要: We present a two-stage D-band power amplifier with stacked HBTs and sub-quarter-wavelength baluns as an efficient compact series combining technique which leads to small die area of 0.62 mm² record 254 mW/mm² output per unit area. The has been fabricated in 90 nm SiGe BiCMOS technology produces more than 21 dBm over the frequency range 114-130 GHz peak 160 mW (~22 dBm) at 120 3-dB signal bandwidth 35 GHz. To author's knowledge, this is highest recorded for Si/SiGe process above 100 This amount 32% higher prior work while chip 13% size that work.
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