Characterization and Modeling of an SiGe HBT Technology for Transceiver Applications in the 100–300-GHz Range
作者： S. P. Voinigescu , E. Dacquay , V. Adinolfi , I. Sarkas , A. Balteanu
DOI: 10.1109/TMTT.2012.2224368
关键词:
摘要: This paper describes a methodology for extracting and verifying the high-frequency model parameters of HICUM L0 L2 models silicon-germanium HBT from device circuit measurements in 110-325-GHz range. For first time, non-quasi-static effects, missing HICUM/L0 model, are found to be essential accurately capturing frequency dependence transistor maximum available power gain beyond inflection unconditional stability. Furthermore, it is demonstrated that optimal partitioning area periphery components junction base-emitter, base-collector, collector-substrate capacitances, internal external base collector resistances can only determined S -parameter 200 GHz. The extracted validated on state-of-the-art linear nonlinear circuits (amplifier, voltage-controlled oscillator (VCO), VCO + divider chain) operating at frequencies as high 240
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