Multilayer microelectronic photomultiplier device with a stacked series of dynode and insulating layers

摘要: A muitilayer microelectronic photomultiplier device is fabricated by disce procedures to provide a photocathodeanode and dynode chain arrangement which analogous in operation conventional tubes. This multilayer provides for low level photon detection realizes the advantages of high reliability, small size fast response, plus lower cost, weight power consumption compared In addition, fabrication on an SOI substrate permits integration logic control circuitry with detectors. The insulating also on-chip voltage supply may easily be extended plurality detectors packing densities due inherently stacked geometry offering improved performance design flexibility.