Memory device including a dielectric multilayer structure and method of fabricating the same
作者： Chung-woo Kim , Sanghun Jeon , Hyunsang Hwang
DOI:
关键词: Electrode 、 Electronic engineering 、 Gate oxide 、 Dielectric 、 Impurity 、 Layer (electronics) 、 Gate dielectric 、 Optoelectronics 、 Oxide 、 Materials science 、 Quantum tunnelling
摘要: In a memory device including dielectric multilayer structure, and method of fabricating the same, includes semiconductor substrate, first impurity region second spaced apart from each other in gate structure formed on substrate contacting region, tunneling oxide layer charge storage layer, an insulating at least two layers, electrode layer.
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