Method of preventing fluorine-induced gate oxide degradation in WSix polycide structure

摘要: A new method of fabricating a polycide gate structure is described. polysilicon layer provided overlying oxide on the surface semiconductor substrate. thin conducting diffusion barrier deposited layer. tungsten silicide wherein reaction gas used in deposition contains fluorine atoms and are incorporated into The polysilicon, barrier, layers patterned to form structures. wafer annealed complete formation structures number from diffusing minimized by presence because minimized, thickness does not increase. This prevents device degradation such as threshold voltage shift saturation current decrease.