Semiconductor device and fabrication process therefor
作者： Takeru Matsuoka , Hiroki Takewaka , Shigeru Harada
DOI:
关键词: Ellipse 、 Stress (mechanics) 、 Composite material 、 Buffer (optical fiber) 、 Layer (electronics) 、 Semiconductor device 、 Fabrication 、 Optics 、 Materials science 、 Connection (principal bundle) 、 Electrode
摘要: A semiconductor device includes a pad electrode and main layer of the has plan view shape one selected from group consisting near circle, ellipse, polygon with at least internal angle larger than 90 degrees corner chamfered or rounded. The is connected to lower beneath man via connection hole interposed therebetween protruding section provided layer. stress buffer insulating partition are more preferably corners layers, section.
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