Zachai et al. reply
作者： R. Zachai , K. Eberl , G. Abstreiter , E. Kasper , H. Kibbel
DOI: 10.1103/PHYSREVLETT.65.2611
关键词: Materials science
摘要:
harvard.edu
sci-hub.se 参考文章(3)
R. Zachai, K. Eberl, G. Abstreiter, E. Kasper, H. Kibbel, Photoluminescence in short-period Si/Ge strained-layer superlattices. Physical Review Letters. ,vol. 64, pp. 1055- 1058 ,(1990) , 10.1103/PHYSREVLETT.64.1055
Sashi Satpathy, Richard M. Martin, Chris G. Van de Walle, Electronic properties of the (100) (Si)/(Ge) strained-layer superlattices Physical Review B. ,vol. 38, pp. 13237- 13245 ,(1988) , 10.1103/PHYSREVB.38.13237
Uwe Schmid, Niels E. Christensen, Manuel Cardona, Direct transition energies in strained ten-monolayer Ge/Si superlattices. Physical Review Letters. ,vol. 65, pp. 2610- 2610 ,(1990) , 10.1103/PHYSREVLETT.65.2610