Band-edge photoluminescence of SiGe/strained-Si/SiGe type-II quantum wells on Si(100)
作者： Deepak K. Nayak , Noritaka Usami , Susumu Fukatsu , Yasuhiro Shiraki
DOI: 10.1063/1.110110
关键词:
摘要: A high‐quality completely relaxed SiGe buffer layer is grown on Si(100) by gas‐source molecular‐beam epitaxy. pseudomorphic Si this to form SiGe/strained‐Si/SiGe type‐II (staggered) quantum wells. Intense band‐edge photoluminescence observed from these wells for the first time. The confinement effect in demonstrated systematic shift of energy peaks with width well. Transitions strained‐Si well are identified as radiative recombination excitons, which confined into
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