Method using surface photovoltage (SPV) measurements for revealing heavy metal contamination of semiconductor material

摘要: A method for revealing the presence of heavy metal impurities that may have been introduced during formation a layer, such as deposition an epitaxial layer on semiconductor substrate, uses constant-magnitude steady-state surface photovoltage (SPV) determining minority-carrier diffusion length by essentially two determination steps. large ratio respective lengths determined before (actually measured or based priori knowledge similar material) and after step is indicative impurity in layer. The fact contaminating distributes itself substantially uniformly not only through but also throughout substrate.