Improvement of contact resistance in flexible a-IGZO thin-film transistors by CF4/O2 plasma treatment
作者： S. Knobelspies , A. Takabayashi , A. Daus , G. Cantarella , N. Münzenrieder
DOI: 10.1016/J.SSE.2018.10.002
关键词: Semiconductor 、 Amorphous solid 、 Electrode 、 Transistor 、 Plasma 、 Fabrication 、 Optoelectronics 、 Contact resistance 、 Materials science 、 Thin-film transistor
摘要: Abstract In this work, we analyze the effect of CF4/O2 plasma treatment on contact interface between amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) semiconductor and Titanium-Gold electrodes. First, influence is evaluated using transmission line structures compared to pure O2 CF4 plasma, resulting in a reduction resistance RC by factor 24.2 untreated interfaces. Subsequently, integrated a-IGZO thin-film transistor (TFT) fabrication process flow. We achieve gate bias dependent up 13.4, which results an increased current drive capability. Combined with associated channel length reduction, effective linear field-effect mobility μ lin , FE eff 74.6% for treated TFTs reference devices.
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