The Effective Potential in Device Modeling: The Good, the Bad and the Ugly

作者: D.K. Ferry , S. Ramey , L. Shifren , R. Akis

DOI: 10.1023/A:1020763710906

关键词: Charge (physics)Electronic engineeringQuantum mechanicsPhysicsQuantization (physics)Quantum tunnelling

摘要: We discuss the use of effective potential to incorporate quantum effects in device models. While threshold shifts and charge set-back are handled well, tunneling is not well by this approach, or any other local approach.

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