Threshold voltage calculation in ultrathin-film soi mosfets using the effective potential
作者： S.M. Ramey , D.K. Ferry
DOI: 10.1109/TNANO.2003.817224
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摘要: The success of the effective potential method including quantum confinement effects in simulations MOSFETs is based on ability to calculate ahead time extent Gaussian wave packet used describe electron. In calculation Gaussian, inversion layer assumed form a triangular well, from which suitable standard deviation can be obtained. situation an ultrathin silicon-on-insulator (SOI) MOSFET slightly different, that well has bottom, but there significant contribution rectangular barriers formed by gate oxide and buried oxide. For this more complex it interest determine range applicability model with constant deviation. paper, we include Monte Carlo calculations threshold voltage SOI MOSFETs. We find recovers expected trend shift decreasing silicon thickness, down thickness approximately 3 nm.
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