Consequences of the Shockley-Read-Hall Statistics for the Small Signal DLTS Response from Insulator-Semiconductor Interface Traps
作者： M. Grendel
DOI: 10.1016/S0167-2991(08)65130-7
关键词: Analytical chemistry 、 Materials science 、 Optoelectronics 、 Interface (Java) 、 Signal 、 Spectroscopy 、 Insulator (electricity) 、 Semiconductor
摘要: Publisher Summary When investigating semiconductor-insulator interface states in MIS structures by various modifications of deep-level-transient spectroscopy (DLTS), it is mostly supposed that the measured DLTS signal only due to emission carriers from traps. However, many cases capture may accompany or even prevail over and previous assumption lead incorrect results. The chapter discusses consequences Shockley-Read-Hall stastics for small-signal response insulator-semiconductor
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