Theory of transient emission current in MOS devices and the direct determination interface trap parameters
作者： J.G. Simmons , L.S. Wei
DOI: 10.1016/0038-1101(74)90059-8
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摘要: Abstract The physics is discussed of the emission electrons from interface states in metal-insulator-semiconductor (MIS) systems, under isothermal, non-steady-state conditions. Generalized equations are then derived which permit determination non-steady-state, current vs time characteristics for MOS systems containing an arbitrary distribution surface states; special case a discrete state also studied. More important, however, by appropriate plotting data, it shown how to directly extract experimental data energy and capture cross section traps upper-half band gap n-type semiconductors, lower-half p-type semiconductors.
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