Surface passivation of p-type crystalline Si by plasma enhanced chemical vapor deposited amorphous SiC x :H films
作者： I. Martı́n , M. Vetter , A. Orpella , J. Puigdollers , A. Cuevas
DOI: 10.1063/1.1404406
关键词: Amorphous silicon 、 Analytical chemistry 、 Silicon 、 Plasma-enhanced chemical vapor deposition 、 Silane 、 Thin film 、 Passivation 、 Chemical vapor deposition 、 Amorphous solid 、 Materials science
摘要: Excellent passivation properties of intrinsic amorphous silicon carbide (a-SiCx:H) films deposited by plasma enhanced chemical vapor deposition on single-crystalline (c-Si) wafers have been obtained. The dependence the effective surface recombination velocity, Seff, temperature, total pressure and methane (CH4) to silane (SiH4) ratio has studied for these using lifetime measurements made with quasi-steady-state photoconductance technique. lifetime, τeff, excess carrier density, Δn, measured also simulated through a physical model based Shockley–Read–Hall statistics an insulator/semiconductor structure fixed charges band bending. A Seff at a-SiCx:H/c-Si interface lower than 30 cm s−1 was achieved optimized conditions. This quality found be three times better that noncarbonated (a-Si:H) under equivalent
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