Characterization of industrial p-type CZ silicon wafers passivated with a-SiC/sub x/:H films
作者： M. Vetter , Y. Touati , I. Martin , R. Ferre , R. Alcubilla
DOI: 10.1109/SCED.2005.1504370
关键词:
摘要: In this work we investigate the impact of surface passivation on efficiency solar cells produced industrial p-type Czochralsky(CZ)-grown crystalline silicon wafers as those used in standard fabrication process ISOFOTON. The investigation has two objectives. first objective is to estimate bulk minority carrier lifetime CZ material. For purpose effective with different thicknesses determined using quasi steady-state photoconductance (QSS-PC) method. To eliminate effect recombination, amorphous carbide films are deposited by plasma enhanced chemical vapour deposition (PECVD) both wafer surfaces. second find out how cell parameters like open circuit voltage and modified when simultaneously a thickness reduction an back applied. This done through analysis injection level dependent data together PC-ID simulation.
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