Empirical relation between gate voltage and electrostatic potential in the one-dimensional electron gas of a split-gate device.

作者: D. A. Wharam , U. Ekenberg , M. Pepper , D. G. Hasko , H. Ahmed

DOI: 10.1103/PHYSREVB.39.6283

关键词: Narrow channelPhysicsFunction (mathematics)Condensed matter physicsParabolic potentialCommunication channelHeterojunctionGate voltageFermi gas

摘要: We study the magnetic depopulation of one-dimensional subbands in a narrow channel GaAs-${\mathrm{Al}}_{\mathrm{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$As heterojunction. The is sufficiently short that transport through ballistic and quantized resistance due to subband structure readily observed. have made detailed comparison between experimental data variational calculation with simple model potential. This potential flat middle parabolic at edges it found be clearly better than commonly used Both thickness carrier concentration been extracted as function gate voltage. good agreement only two adjustable parameters indicates this gives description actual electron gas split-gate device.

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