作者: D. A. Wharam , U. Ekenberg , M. Pepper , D. G. Hasko , H. Ahmed
关键词: Narrow channel 、 Physics 、 Function (mathematics) 、 Condensed matter physics 、 Parabolic potential 、 Communication channel 、 Heterojunction 、 Gate voltage 、 Fermi gas
摘要: We study the magnetic depopulation of one-dimensional subbands in a narrow channel GaAs-${\mathrm{Al}}_{\mathrm{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$As heterojunction. The is sufficiently short that transport through ballistic and quantized resistance due to subband structure readily observed. have made detailed comparison between experimental data variational calculation with simple model potential. This potential flat middle parabolic at edges it found be clearly better than commonly used Both thickness carrier concentration been extracted as function gate voltage. good agreement only two adjustable parameters indicates this gives description actual electron gas split-gate device.