Oxygen vacancy control as a strategy to achieve highly reliable hafnia ferroelectrics using oxide electrode
作者： Youngin Goh , Sung Hyun Cho , Sang-Hee Ko Park , Sanghun Jeon
DOI: 10.1039/D0NR00933D
关键词: Negative impedance converter 、 Thin film 、 Electronics 、 Ferroelectricity 、 Oxide 、 Polarization (electrochemistry) 、 Materials science 、 Optoelectronics 、 Electrode 、 Hafnia
摘要: … film interface, indicating that the interfacial RuO 2 is reduced to Ru and provides oxygen to the HZO film… Retention data by extrapolating the normalized polarization versus log(time) of (b…
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sci-hub.se 参考文章(24)
T. S. Böscke, J. Müller, D. Bräuhaus, U. Schröder, U. Böttger, Ferroelectricity in hafnium oxide thin films Applied Physics Letters. ,vol. 99, pp. 102903- ,(2011) , 10.1063/1.3634052
Stefan Mueller, Johannes Muller, Uwe Schroeder, Thomas Mikolajick, Reliability Characteristics of Ferroelectric $ \hbox{Si:HfO}_{2}$ Thin Films for Memory Applications IEEE Transactions on Device and Materials Reliability. ,vol. 13, pp. 93- 97 ,(2013) , 10.1109/TDMR.2012.2216269
M. Hoffmann, U. Schroeder, T. Schenk, T. Shimizu, H. Funakubo, O. Sakata, D. Pohl, M. Drescher, C. Adelmann, R. Materlik, A. Kersch, T. Mikolajick, Stabilizing the ferroelectric phase in doped hafnium oxide Journal of Applied Physics. ,vol. 118, pp. 072006- ,(2015) , 10.1063/1.4927805
Han Joon Kim, Min Hyuk Park, Yu Jin Kim, Young Hwan Lee, Taehwan Moon, Keum Do Kim, Seung Dam Hyun, Cheol Seong Hwang, A study on the wake-up effect of ferroelectric Hf0.5Zr0.5O2 films by pulse-switching measurement Nanoscale. ,vol. 8, pp. 1383- 1389 ,(2016) , 10.1039/C5NR05339K
M. Dawber, K. M. Rabe, J. F. Scott, Physics of thin-film ferroelectric oxides Reviews of Modern Physics. ,vol. 77, pp. 1083- 1130 ,(2005) , 10.1103/REVMODPHYS.77.1083
Sayeef Salahuddin, Supriyo Datta, Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices Nano Letters. ,vol. 8, pp. 405- 410 ,(2008) , 10.1021/NL071804G
Jin-Hyock Kim, Deok-Sin Kil, Seung-Jin Yeom, Jae-Sung Roh, Noh-Jung Kwak, Jin-Woong Kim, Modified atomic layer deposition of RuO2 thin films for capacitor electrodes Applied Physics Letters. ,vol. 91, pp. 052908- ,(2007) , 10.1063/1.2767769
J.H. Choi, Y. Mao, J.P. Chang, Development of hafnium based high-k materials—A review Materials Science & Engineering R-reports. ,vol. 72, pp. 97- 136 ,(2011) , 10.1016/J.MSER.2010.12.001
J. Müller, T. S. Böscke, D. Bräuhaus, U. Schröder, U. Böttger, J. Sundqvist, P. Kücher, T. Mikolajick, L. Frey, Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications Applied Physics Letters. ,vol. 99, pp. 112901- ,(2011) , 10.1063/1.3636417
Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Taehwan Moon, Keum Do Kim, Cheol Seong Hwang, Thin HfxZr1‐xO2 Films: A New Lead‐Free System for Electrostatic Supercapacitors with Large Energy Storage Density and Robust Thermal Stability Advanced Energy Materials. ,vol. 4, pp. 1400610- ,(2014) , 10.1002/AENM.201400610