Physics of thin-film ferroelectric oxides
作者： M. Dawber , K. M. Rabe , J. F. Scott
DOI: 10.1103/REVMODPHYS.77.1083
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摘要: This review covers important advances in recent years in the physics of thin-film ferroelectric oxides, the strongest emphasis being on those aspects particular to ferroelectrics in thin-film …
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H.‐M. Christen, L. A. Boatner, J. D. Budai, M. F. Chisholm, L. A. Géa, P. J. Marrero, D. P. Norton, The growth and properties of epitaxial KNbO3 thin films and KNbO3/KTaO3 superlattices Applied Physics Letters. ,vol. 68, pp. 1488- 1490 ,(1996) , 10.1063/1.116263
M. Sepliarsky, S. R. Phillpot, M. G. Stachiotti, R. L. Migoni, Ferroelectric phase transitions and dynamical behavior in KNbO3/KTaO3 superlattices by molecular-dynamics simulation Journal of Applied Physics. ,vol. 91, pp. 3165- 3171 ,(2002) , 10.1063/1.1435826
Lixin He, David Vanderbilt, First-principles study of oxygen-vacancy pinning of domain walls in PbTiO 3 Physical Review B. ,vol. 68, pp. 134103- ,(2003) , 10.1103/PHYSREVB.68.134103
L. Fu, E. Yaschenko, L. Resca, R. Resta, Hartree-Fock studies of surface properties of BaTiO 3 Physical Review B. ,vol. 60, pp. 2697- 2703 ,(1999) , 10.1103/PHYSREVB.60.2697
Hiroshi Ishiwara, Toshishige Shimamura Toshishige Shimamura, Eisuke Tokumitsu Eisuke Tokumitsu, None, Proposal of a Single-Transistor-Cell-Type Ferroelectric Memory Using an SOI Structure and Experimental Study on the Interference Problem in the Write Operation Japanese Journal of Applied Physics. ,vol. 36, pp. 1655- 1658 ,(1997) , 10.1143/JJAP.36.1655
M. Alexe, A. Gruverman, C. Harnagea, N. D. Zakharov, A. Pignolet, D. Hesse, J. F. Scott, Switching properties of self-assembled ferroelectric memory cells Applied Physics Letters. ,vol. 75, pp. 1158- 1160 ,(1999) , 10.1063/1.124628
Huaxiang Fu, L. Bellaiche, Ferroelectricity in barium titanate quantum dots and wires Physical Review Letters. ,vol. 91, pp. 257601- ,(2003) , 10.1103/PHYSREVLETT.91.257601
H. H. Wieder, Activation Field and Coercivity of Ferroelectric Barium Titanate Journal of Applied Physics. ,vol. 28, pp. 367- 369 ,(1957) , 10.1063/1.1722749
M. Okuyama, H. Sugiyama, T. Nakaiso, M. Noda, Retention analysis of the memorized states of the MFIS structure for ferroelectric-gate FET memory by considering leakage current through ferroelectric and insulator layers Integrated Ferroelectrics. ,vol. 34, pp. 37- 46 ,(2001) , 10.1080/10584580108012872
I. Stolichnov, A. Tagantsev, N. Setter, S. Okhonin, P. Fazan, J. S. Cross, M. Tsukada, A. Bartic, D. Wouters, Constant-current study of dielectric breakdown of Pb(Zr,Ti)O3 ferroelectric film capacitors Integrated Ferroelectrics. ,vol. 32, pp. 737- 746 ,(2001) , 10.1080/10584580108215676