Soi substrate annealing method and soi substrate
作者： Hiroshi Miyabayashi , Masataka Ito , Nobuhiko Sato
DOI:
关键词: Melting point 、 Materials science 、 Optoelectronics 、 Silicon on insulator 、 Annealing (metallurgy) 、 Soi substrate 、 Electronic engineering 、 Reducing atmosphere 、 Semiconductor
摘要: The number of defects (HF defects) in the SOI layer an substrate is reduced. In annealing method a reducing atmosphere at temperature equal to or less than melting point semiconductor, executed state wherein flow atmospheric gas parallel surface generated near this surface.
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