Self-aligned contact structures using high selectivity etching
作者： Jhon-Jhy Liaw , Jin-Yuan Lee , Li-chih Chao , Yuan-Chang Huang
DOI:
关键词: Isotropic etching 、 Reactive-ion etching 、 Dry etching 、 LOCOS 、 Etching (microfabrication) 、 Silicon 、 Silicon oxide 、 Materials science 、 Electronic engineering 、 Buffered oxide etch 、 Optoelectronics
摘要: A self-aligned structure and method of etching contact holes in the are described. The dielectric materials, methods, etchants chosen to provide high selectivity etching. comprises an electrode with a silicon oxy-nitride cap spacers on sidewalls cap. An etch stop layer nitride is deposited over substrate covering oxide layer. Etching methods used which ratio rate or at least eight two.
lens.org 参考文章(19)
Tadashi Fukase, Takehiko Hamada, Fabrication process of a semiconductor device with a wiring structure ,(1995)
Yeh-Sen Lin, Method for forming crown-shape capacitor node with tapered etching ,(1996)
Brett Rolfson, Randhir P. S. Thakur, Tyler Lowrey, Kirk Prall, Aftab Ahmad, High performance PMOSFET using split-polysilicon CMOS process incorporating advanced stacked capacitior cells for fabricating multi-megabit DRAMS ,(1995)
Jae-Kap Kim, In-Sool Chung, Method for manufacturing an internally shielded dynamic random access memory cell ,(1993)
Chien-Yung Chen, Yen-Shyh Ho, Nitride cap sidewell oxide protection from BOE etch ,(1994)
Hsien-Wen Chang, Chang-Tai Chiao, Lih-Shyng Tsai, Jiunn-Jyi Lin, Modified and robust self-aligning contact process ,(1992)
Mark E. Jost, David S. Becker, Semiconductor processing methods of forming a contact opening to a semiconductor substrate ,(1999)
Kouji C, Hideki C, Semiconductor device having silicon oxynitride film with improved moisture resistance ,(1987)
David S. Becker, Guy T. Blalock, In situ etch process for insulating and conductive materials ,(1993)