Integrated thermal-conductivity vacuum sensor
作者： Erno H Klaassen , Gregory T.A Kovacs
DOI: 10.1016/S0924-4247(97)80222-1
关键词: Silicon 、 Optoelectronics 、 Control system 、 Power (physics) 、 Thermal conductivity 、 Current (fluid) 、 Electrical engineering 、 Torr 、 Operating temperature 、 Materials science 、 Substrate (electronics)
摘要: Abstract A thermal-conductivity vacuum sensor with a novel on-chip control system is presented. The sensing structure small circuit suspended over cavity etched in the (100)-oriented silicon substrate. An integrated maintains constant temperature difference between this thermally isolated and loop allows for digitally adjustable operating of sensor. sensitive range prototype extends from 0.8 Pa (6 mtorr) to approximately 9.2 × 104 (690 torr). has been fabricated completely unmodified foundry CMOS process, provides current output, dissipates only 5 mW power, occupies an area 0.3 mm2.
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