作者: Gaetano Santoruvo , Stefano Lo Priore
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摘要: An integrated heater formed as a field effect transistor in semiconductor substrate, with the having source and drain regions channel region extending therebetween to conduct current. The has resistance when conducting current generate heat above selected threshold. A dielectric layer is disposed on gate electrode control of region. thermally insulating barrier material may extend about transistor. object be heated positioned receive generated by region; fluid chamber.