Semiconductor-on-Insulator Integrated Circuit with Back Side Gate
作者： Sinan Goktepeli , George P. Imthurn , Stuart B. Molin
DOI:
关键词:
摘要: Methods for manufacturing semiconductor-on-insulator (SOI) integrated circuits are disclosed. An SOI wafer is provided having a first surface and second surface. The substrate of the forms A transistor formed in semiconductor layer wafer. handle bonded to then removed expose back buried insulator Conductive material deposited on that covers insulator. conductive patterned form gate electrode
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