Semiconductor-on-Insulator Integrated Circuit with Reduced Off-State Capacitance
作者： Stuart B. Molin , Chris Brindle , Michael A. Stuber
DOI:
关键词:
摘要: An integrated circuit assembly comprises an insulating layer, a semiconductor handle metal interconnect and transistors. The layer has first surface, second hole extending from the surface to surface. of contacting layer. is coupled being disposed within in transistors are located extends at least electrically couples plurality each other.
lens.org 参考文章(69)
Steven L. Merchant, Double-diffused MOS (DMOS) power transistor with a channel compensating implant ,(2000)
John S. Shier, Matthew F. Schmidt, Short channel junction field effect transistor ,(1990)
Sinan Goktepeli, George P. Imthurn, Stuart B. Molin, Semiconductor-on-Insulator Integrated Circuit with Back Side Gate ,(2014)
Bin Yang, Man Fai Ng, Etsoi with reduced extension resistance ,(2010)
Gaetano Santoruvo, Stefano Lo Priore, Heating element for microfluidic and micromechanical applications ,(2002)
Ali Khakifirooz, Robert H Dennard, Jin Cai, ETSOI CMOS with Back Gates ,(2011)
Zvi Or-Bach, Brian Cronquist, Deepak C. Sekar, 3D memory semiconductor device and structure ,(2011)
Alberto O. Adan, Method of making a MOS thin film transistor with self-aligned asymmetrical structure ,(1992)
Stuart B. Molin, Chris Brindle, Michael A. Stuber, Semiconductor-on-insulator integrated circuit with interconnect below the insulator ,(2014)
Michael A. Stuber, Stuart B. Molin, Vertical Semiconductor Device with Thinned Substrate ,(2011)