Semiconductor device having multi-layered wiring
作者： Noriaki Matsunaga
DOI:
关键词: Passivation 、 Layer (electronics) 、 Semiconductor device 、 Optoelectronics 、 Dielectric 、 Materials science
摘要: A semiconductor device is provided with a first insulating film, wiring layer formed in the second film above and including low dielectric constant coupled to through connection section, third serving as one of an interlayer passivation at least films being mainly SiON, SiN, laminated SiON or SiN respectively.
lens.org 参考文章(7)
Mitsuru Sakamoto, Kuniyuki Hamano, Semiconductor device having multilayered wiring structure with a small parasitic capacitance ,(1989)
Guarionex Morales, Method of degassing low k dielectric for metal deposition ,(2000)
Toshiaki Hasegawa, Interlayer insulating film for semiconductor device ,(1996)
Takahisa Yamaha, Moisture resistant semiconductor device ,(1995)
Nakamura Akihiro, SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF ,(2000)
Inoue Yasuo, Hayashi Kiyoshi, Semiconductor device and method for manufacturing same ,(2002)