Light-radiation-electricity conversion semiconductor device and application thereof

摘要: PURPOSE:To enable a depletion layer to be optionally set in thickness matching the energy of radiation measure by method wherein planar type PIN diodes are laminated constitute new detecting device. CONSTITUTION:An N-type semiconductor substrate 1001 as first conductivity is provided with P -type impurity region 1002 second region. An N 1004 higher concentration than surface opposite its other on which provided, PN junction composed , -N and or so-called diode formed. By this setup, nearly equal length side device, can (a few mm tens cm, up maximum diameter wafer allowable an Si process) measure.