作者: Masaharu Muramatsu , Hiroshi Akahori , 雅治 村松 , 寛 赤堀 , 康人 米田
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摘要: PROBLEM TO BE SOLVED: To provide a semiconductor energy detecting element capable of suppressing the deterioration in detection sensitivity and responding speed to an beam enlarging area part where can be detected. SOLUTION: A photo-diode array 1 is provided with P+ diffusion layers 3 4 as second conductivity type layers, N+ channel stop 6 7, layer 8 or like. The 7 are formed at back face side faced incident substrate 2. between adjacent 4, shaped like grid so that separated. frame continued outside 3. wider than 6. COPYRIGHT: (C)2001,JPO