Resistance switching behaviors of amorphous (ZrTiNi)Ox films for nonvolatile memory devices
作者： Hsiao-Ching Yang , Sea-Fue Wang , Jinn P. Chu
DOI: 10.1116/1.4896329
关键词: Oxide 、 Amorphous solid 、 Resistive random-access memory 、 Materials science 、 Non-volatile memory 、 Optoelectronics 、 Nanotechnology 、 Ohmic contact 、 Oxygen 、 Platinum 、 Thermal conduction
摘要: In this study, the resistive switching characteristics of a multicomponent oxide (ZrTiNi)Ox film with thickness 50 nm for random access memory applications are investigated and discussed, intended to be used complement studies simple binary oxides reported in literature. Analysis reveals that deposited films amorphous highly oxygen-deficient chemical formula (Zr0.74Ti0.15Ni0.11)O1.12□0.78 which concentration existing oxygen vacancies found 41% total ion sites. The prepared Pt/(ZrTiNi)Ox/Pt device exhibits excellent unipolar behavior marked substantial resistance ratio (larger than 102), good endurance, long retention time. low state linear ohmic as result conductive filament aligned vacancies, while high conduction contributes space-charge-limited current mechanism.
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