Improvement of resistive switching uniformity for TiO2-based memristive devices by introducing a thin HfO2 layer
作者： Hao Jiang , Qiangfei Xia
DOI: 10.1116/1.4831764
关键词:
摘要: Memristive devices have attracted considerable attention as a promising candidate for the next generation nonvolatile random access memory and unconventional computing. One obstacle wide applications of these is their performance variation from device to cycle cycle. Here, authors report that by introducing thin HfO2 layer into Pt/TiO2/Pt geometry, cycle-to-cycle uniformity programing voltages resistance states are greatly improved. The distributed in much narrower ranges. uniformities low-resistance state high-resistance were improved 25 20 times, respectively. It believed extra has led fewer potential conducting filaments bilayer devices, contributing significant improvement switching uniformity.
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