High-efficiency magnetic modulation in Ti/ZnO/Pt resistive random-access memory devices using amorphous zinc oxide film
作者： Shuxia Ren , Weichao Dong , Hao Tang , Lingzhi Tang , Zhenhua Li
DOI: 10.1016/J.APSUSC.2019.05.129
关键词:
摘要: … substantially enhanced magnetic modulation, improved resistive switching (RS) ratio and … approximately 880 times, and the coefficients of variation for SET and RESET voltages are …
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