Annealed AlOx film with enhanced performance for bipolar resistive switching memory

摘要: Abstract Although some efforts have been dedicated to explore aluminum oxide (AlOx) based memory devices in the past few years, disappointed stability and complicated fabrication process strictly limit its wide applications. In this study, we introduce annealing treatment as an effective method substantially improve non-volatile resistive switching performance of AlOx film devices. Fabricated by radio frequency magnetron sputtering at room temperature, are subsequently annealed nitrogen atmosphere with temperature range from 100 °C 500 °C. The exhibit enhanced bipolar properties forming-free nature, high HRS/LRS ratio (>103), long retention time (>104s) statistical (>200 cycles). conductive filaments constructed oxygen vacancies has demonstrated a dominant factor for behavior devices, introducing oxygen-free will increase proportion vacancies, thus resulting considerable improvement. Our work proves great potential layer random access also paves way optimization relevant on binary metal oxides.