作者: D C Rodway , M G Astles , D R Wight
DOI: 10.1088/0022-3727/16/12/009
关键词: Analytical chemistry 、 Crystal 、 Dipole 、 Caesium 、 Chemistry 、 Epitaxy 、 Layer (electronics) 、 Deposition (chemistry) 、 Work function 、 Cadmium telluride photovoltaics
摘要: The effect of the deposition caesium overlayers on (111)A and (111)B epitaxial p-type CdTe has been studied in order to assess potential such material for use NEA photoemission devices. It was found that, although clean surfaces with a Cd/Te ratio appropriate crystal face could be readily obtained, their work-function much lower than that reported by Swank (1967) cleaved n-type (110) surface below value first ionisation caesium. As result, it not possible form dipole layer hence minimum achievable bulk