In situ AES and work-function study of the deposition of caesium on CdTe

作者: D C Rodway , M G Astles , D R Wight

DOI: 10.1088/0022-3727/16/12/009

关键词: Analytical chemistryCrystalDipoleCaesiumChemistryEpitaxyLayer (electronics)Deposition (chemistry)Work functionCadmium telluride photovoltaics

摘要: The effect of the deposition caesium overlayers on (111)A and (111)B epitaxial p-type CdTe has been studied in order to assess potential such material for use NEA photoemission devices. It was found that, although clean surfaces with a Cd/Te ratio appropriate crystal face could be readily obtained, their work-function much lower than that reported by Swank (1967) cleaved n-type (110) surface below value first ionisation caesium. As result, it not possible form dipole layer hence minimum achievable bulk

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