Unique f-level resonant state within the gap in Ce3Au3Sb4 single crystals: Magnetic, thermal, and transport properties
作者： Han-Oh Lee , Youn-Jung Jo , Luis Balicas , P. Schlottmann , Cathie L. Condron
DOI: 10.1103/PHYSREVB.76.155204
关键词: Strongly correlated material 、 Variable-range hopping 、 Magnetic susceptibility 、 Condensed matter physics 、 Narrow-gap semiconductor 、 Density of states 、 Kondo insulator 、 Materials science 、 Valence (chemistry) 、 Thermal conduction
摘要: The magnetic, thermal, and transport properties of single crystals the narrow gap semiconductor Ce3Au3Sb4 have been studied. Transport data are consistent with an exponential activation variable range hopping at low temperatures, which is characteristic weak disorder localization. specific heat magnetic susceptibility suggest existence a large density states localized in gap. physics then different from standard Kondo insulators. From its unique physical properties, we propose three band model valence, conduction, f bands that explains most experimental findings.
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