Electronic and magnetic properties of off-stoichiometric Co 2 Mn β Si /MgO interfaces studied by x-ray magnetic circular dichroism
作者： V. R. Singh , V. K. Verma , K. Ishigami , G. Shibata , A. Fujimori
DOI: 10.1063/1.4921538
关键词: Formula unit 、 Spin (physics) 、 Crystallography 、 Magnetic moment 、 Magnetoresistance 、 Condensed matter physics 、 X-ray magnetic circular dichroism 、 Tunnel effect 、 Magnetic circular dichroism 、 Materials science 、 Tunnel magnetoresistance
摘要: We have studied the electronic and magnetic states of Co Mn atoms at interface Co2MnβSi (CMS)/MgO (β = 0.69, 0.99, 1.15, 1.29) tunnel junction (MTJ) by means x-ray circular dichroism. In particular, composition (β) dependences moments were investigated. The experimental spin Mn, mspin(Mn), derived from dichroism weakly decreased with increasing β in going Mn-deficient to Mn-rich CMS films. This behavior was explained first-principles calculations based on antisite-based site-specific formula unit (SSFU) model, which assumes formation only antisite defect, not vacancies, accommodate off-stoichiometry. Furthermore, Co, mspin(Co), also composition. consistently SSFU decrease concentra...
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