Quantum oscillations and interference effects in strained n- and p-type modulation doped GaInNAs/GaAs quantum wells
作者： F Sarcan , F Nutku , O Donmez , F Kuruoglu , S Mutlu
DOI: 10.1088/0022-3727/48/30/305108
关键词: Weak localization 、 Quantum oscillations 、 Magnetoresistance 、 Electron density 、 Quantum Hall effect 、 Landau quantization 、 Spintronics 、 Quantum well 、 Condensed matter physics 、 Physics
摘要: We have performed magnetoresistance measurements on n- and p-type modulation doped GaInNAs/GaAs quantum well (QW) structures in both the weak (B < 0.08 T) high magnetic field (up to 18 at 75 mK 6 K. observe that oscillations Hall effect (QHE) plateaus are affected from presence of nitrogen III–V lattice. The enhancement N-related scatterings electron effective mass with increasing causes lower mobility higher two-dimensional (2D) density, leading suppressed QHE up 7 T Shubnikov de Haas (SdH) develop fields for samples K amplitude SdH decreases composition. well-pronounced observed T, sample. For n-type samples, anomalies characteristic is attributed nitrogen-related disorders overlapping fluctuating Landau levels. low reveal exhibit antilocalization, whereas localization observation antilocalization an indication strong spin–orbit interactions. traces used extract spin coherence, phase coherence elastic scattering times as Rashba parameters spin-splitting energy. calculated containing composition a significant parameter determine degree Consequently, GaInNAs-based QW various compositions can be beneficial adjust coupling strength may candidate spintronics applications.
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