Effect of annealing process on hot-electron energy relaxation rates in n-type modulation-doped Ga0.68In0.32N0.017As/GaAs quantum wells via deformation potential and piezoelectric scatterings

摘要: Abstract Hot electrons relax by interacting with phonons, so information about the electron-phonon interaction mechanisms are obtained examining cooling processes of hot electrons. In this study, effect annealing time on electron temperature and energy relaxation rates in as-grown annealed n-type modulation-doped Ga0.68In0.32N0.017As0.983/GaAs quantum well (QW) samples were investigated comparing relative amplitudes Shubnikov-de Haas oscillations as a function electric field. The grown molecular beam epitaxy (MBE) at 700 °C for 60 s 600 s. Experiments carried out applying an field between 0.165 5.276 kV/m range 1.8 40 K under magnetic up to 11 T. energy-relaxation mechanism is found be mixing piezoelectric deformation potential scatterings low-temperature regime temperature. power loss phonons characterized exponential term γ, which from 3.42 4.97. change γ showed that scattering affected time. stress constant (e14) chosen fit parameter theoretical calculations, was 0.129 0.134. crystal quality low temperatures has been observed effective times.