Nitride compound semiconductor laser and its manufacturing method
作者： Shinya Nunoue , Masaaki Onomura , Masayuki Ishikawa , Genichi Hatakoshi
DOI:
关键词: Polyimide 、 Active layer 、 Optoelectronics 、 Materials science 、 Nitride 、 Transverse mode 、 Electrode 、 Voltage 、 Laser 、 Semiconductor
摘要: In a nitride compound semiconductor laser including an active layer sandwiched by layers of different conduction types on sapphire substrate, polyimide for current blocking and light confinement are formed side surfaces mesa-type confining structure with under the p-side electrode. The ensures efficient, uniform carrier injection into layer, suppresses higher-order modes other than fundamental transverse mode, thereby promises high reliability ensuring continuous pulsation low threshold operation voltage noise characteristics.
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