Flash memory having a high-permittivity tunnel dielectric
作者： Leonard Forbes
DOI:
关键词: Permittivity 、 Metal gate 、 Gate oxide 、 Dielectric 、 Gate dielectric 、 Materials science 、 Flash memory 、 High-κ dielectric 、 Time-dependent gate oxide breakdown 、 Optoelectronics 、 Electrical engineering
摘要: A high permittivity tunneling dielectric is used in a flash memory cell to provide greater current into the floating gate with smaller voltages. The has substrate source/drain regions. high-k formed above substrate. can be deposited using evaporation techniques or atomic layer deposition techniques. on top of an oxide insulator that. polysilicon control insulator.
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