Tunneling Current through Si Donor Level in GaAs/AlAs Single-Barrier Diodes.
作者： Hiroyuki Fukuyama , Takao Waho , Masafumi Yamamoto
DOI: 10.1143/JJAP.36.4267
关键词: Silicon 、 Shallow donor 、 Tunnel effect 、 Diode 、 Impurity 、 Chemistry 、 Binary compound 、 Condensed matter physics 、 Current (fluid) 、 Analytical chemistry 、 Doping
摘要: The tunneling current in Si planar-doped GaAs/AlAs single-barrier diodes is studied. First, we determine the effects of growth interruption and doped impurities on current. We observe excess for a sample with doping during (Si planar doping) AlAs barrier, while do not it which was subjected only to interruption. This result shows that caused by incorporated from background but intentional impurities. then examine dependence concentration. increases as concentration increases. provides further evidence introduce paths flow In conductance–voltage characteristics, peak corresponding suggests flows through zero-dimensional states. Finally, discuss donor levels possible origins shallow level probably responsible
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