作者: J.-W. Sakai , T. M. Fromhold , P. H. Beton , L. Eaves , M. Henini
关键词: Condensed matter physics 、 Bound state 、 Wave function 、 Quantum well 、 Resonance 、 Resonant-tunneling diode 、 Electron 、 Magnetic field 、 Quantum tunnelling 、 Physics
摘要: We have measured the low-temperature (4.2 K) current-voltage characteristics I(V) of a GaAs/(AlGa)As double-barrier resonant tunneling diode in which quantum well is intentionally 6 doped with Si donors. A peak at low voltage observed and attributed to electrons from two-dimensional free-electron-like states into fully localized bound shallow The magnetic-field dependence this fundamentally different that main resonance. show Fourier spectrum shallow-donor wave function may be deduced variation amplitude magnetic field