Phonon-assisted tunnelling in GaAs/(AlGa)As resonant tunnelling devices
作者： F.F. Ouali , N.N. Zinov'ev , L.J. Challis , A.V. Akimov , D.N. Hill
DOI: 10.1016/0921-4526(95)00636-2
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摘要: Abstract Assisted tunnelling induced by non-equilibrium phonons in a double barrier device is reported. The linear variation of the phonon peak with frequency shows that system has potential as spectrometer.
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