作者: R A Davies , D J Newson , T G Powell , M J Kelly
DOI: 10.1088/0268-1242/2/1/009
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摘要: The authors describe the effect of a magnetic field on current-voltage characteristics semiconductor tunnel barriers in which superlattices are used to filter initial and final states. A applied parallel layers was found destroy negative differential conductance intrinsic such structures, with zero-bias anomaly appearing high fields. qualitative explanation this, considers electron states superlattice tunnelling process, is presented.