Tunneling in Semiconductor Microstructures in the Presence of a Transverse Magnetic Field
作者： G. Platero , C. Tejedor
DOI: 10.1007/978-1-4615-3846-2_25
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摘要: Resonant magnctotunneling current through double barrier systems is calculated for B⊥J by means of the Generalized Transfer Hamiltonian formalism1.Both coherent and sequential tunneling processes are anulyzcd as a function external bias magnetic field. The characteristic curve I/V qualitatively very different magnetotunncling their relative intensity can he controlled changing field sample characteristics.We propose model to describe process in terms Hall discret set channels.
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