Magnetic field studies of negative differential conductivity in double barrier resonant tunnelling structures based on n-InP/(InGa)As
作者： M.L. Leadbeater , L. Eaves , P.E. Simmonds , G.A. Toombs , F.W. Sheard
DOI: 10.1016/0038-1101(88)90372-3
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摘要: Abstract Negative differential conductivity (NDC) with a peak/valley ratio of 4.5:1 (4 K) and 2:1 (150 is observed in double barrier resonant tunnelling devices based on n-InP/(InGa)As. A transverse magnetic field applied the plane barriers ( J ¦ B ) significantly changes current-voltage characteristics eliminates NDC for fields above −10 T. This behaviour explained qualitatively terms effect vector potential electrons. The magneto-oscillations current ‖ are discussed simple model tunnelling.
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