Photon assisted growth of HgTe by metalorganic chemical vapor deposition
作者： A. Ruzin , Y. Nemirovsky
DOI: 10.1007/BF02661378
关键词: Helium 、 Activation energy 、 Chemical vapor deposition 、 Metalorganic vapour phase epitaxy 、 Physical chemistry 、 Chemistry 、 Cadmium telluride photovoltaics 、 Partial pressure 、 Inorganic compound 、 Thin film
摘要: Photon assisted metalorganic chemical vapor deposition (MOCVD) of HgTe by the reaction mercury and diethyltelluride (DETe) on CdTe substrates is reported. The growths were done at 380–450°C subatmospheric pressure, with helium as carrier gas. A simple kinetic model for MOCVD growth presented. yields rate a function gas-phase partial pressures constituents in various limiting cases, corroborated experimental results. apparent activation energy without photons (33–49 kcal/mol) exceeds pyrolysis DETe (∼25 significantly reduced photon (18–28 kcal/mol). effect morphology, thickness uniformity, location along susceptor also presented discussed.
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