作者: A. Vattré , T. Jourdan , H. Ding , M.-C. Marinica , M. J. Demkowicz
DOI: 10.1038/NCOMMS10424
关键词: Anisotropic elasticity 、 Kinetic Monte Carlo 、 Materials science 、 Random walk 、 Crystallographic defect 、 Sink (geography) 、 Radiation resistance 、 New materials 、 Mechanics 、 Nanotechnology 、 Radiation damage
摘要: … interface and Ag twist GB, vacancies preferentially migrate to the dislocation lines, whereas interstitials are mostly absorbed … elastic strain fields ɛ int of interface dislocation arrays using …