Recrystallization of copper at a solid interface for improved CVD graphene growth

摘要: The quality of CVD-grown graphene is intimately linked to the morphology employed catalyst. One commonly route enhanced catalyst recrystallization prior growth. dimensions a catalyst's single-crystalline domains, however, are limited by stability dislocations at grain boundaries. We here employ solid material in contact with as sink for dislocations. It was found that interaction between Cu-foil and cap significantly alters kinetics achievable size. This development originates from an improved strain-relaxation up 1% during which can support formation unstable surface orientations. Correlation diffraction measurements atomic force microscopy reveals direct impact strain relaxation on decrease copper roughness. Finally, we demonstrate improvement grown thus prepared foils through spectroscopic carrier transport measurements.