POLARIZATION-INDUCED CHARGE AND ELECTRON MOBILITY IN ALGAN/GAN HETEROSTRUCTURES GROWN BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY
作者： I. P. Smorchkova , C. R. Elsass , J. P. Ibbetson , R. Vetury , B. Heying
DOI: 10.1063/1.371396
关键词: Epitaxy 、 Materials science 、 Doping 、 Fermi gas 、 Electron mobility 、 Molecular beam epitaxy 、 Condensed matter physics 、 Scattering 、 Analytical chemistry 、 Electron 、 Heterojunction
摘要: … polarization-induced charge at the top of the AlGaN layer has to be reduced then by some positive surface charges… will be determined by the polarization-induced charges Fig. 5a . As …
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